Dr. Fan Ren is an internationally distinguished researcher whose pioneering contributions have profoundly shaped the fields of semiconductor device engineering, wide-bandgap materials, and electronic sensor technologies. With an exceptional scholarly impact reflected in 63,504 citations, an h-index of 112, and an i10-index of 1,020, Dr. Ren stands among the most influential scientists in advanced materials and applied electronic systems. His research spans the development of high-performance gallium nitride (GaN) and silicon carbide (SiC) devices, novel doping techniques, and breakthrough advancements in high-temperature and radiation-hardened electronics. Dr. Ren’s innovative work on chemical and biological sensors has enabled transformative applications in environmental monitoring, medical diagnostics, defense technologies, and industrial safety, significantly expanding the global impact of semiconductor-based sensing platforms. His collaborations have fostered multidisciplinary progress, integrating materials science, electrical engineering, and applied physics to address complex challenges in next-generation electronic devices. Over his prolific career, Dr. Ren has published extensively in top-tier journals, consistently producing high-quality, high-impact research that drives both fundamental understanding and technological innovation. His contributions have advanced fabrication methods, improved device reliability, and opened new avenues for sensing and power electronics, influencing academic research, industrial development, and national technological capabilities. A leader, mentor, and visionary, Dr. Ren continues to inspire emerging scientists while shaping the future of semiconductor technology through sustained excellence in research, collaboration, and innovation.